Constantly, EdisonReport receives email wanting to know when Cree will expand their offering with very low basal plane dislocation 4H Silicon Carbide Epitaxial Wafers. Today is the day.
Finally, It’ Here. Cree Expands Product Offering with Very Low Basal Plane Dislocation 4H Silicon Carbide Epitaxial Wafers
- by Randy Reid
- September 4, 2012